By Foad Arfaei Malekzadeh
This publication describes cutting edge innovations and the theoretical history for layout and research of excessive functionality RF/Microwave transmitters. It introduces new, powerful linearization/efficiency enhancement recommendations, appropriate to the entire switched mode energy amplifiers. Novel research tools linked to those new thoughts also are brought and assisting dimension effects are documented. leading edge graphical illustration equipment are used to aid the reader comprehend the problem intuitively. functions for the recommendations mentioned are very wide, starting from information convertors to RF/Microwave/mm-wave wireless/wire line transmitters. The authors have kept away from utilizing long formulation within the dialogue and feature used an intuitive and easy method of wade through the required details. Readers will achieve useful knowing of the dither phenomenon, its mechanism, influence and undesired unwanted effects. the radical architectures brought are uncomplicated, don’t require advanced DSP options and are effortless to enforce.
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Additional resources for Analog Dithering Techniques for Wireless Transmitters
El-Hamamsy S-A (1994) Design of high-efficiency RF Class-D power amplifier. IEEE Trans Power Electron 9(3):297–308 7. Johnson T et al (2007) CMOS RF class-D power amplifier with bandpass sigma-delta modulation. Microelectron J 38(3):439–446 8. Chowdhury D, Thyagarajan SV, Ye L, Alon E, Niknejad AM (2011) A fully-integrated efficient CMOS inverse Class-D power amplifier for digital polar transmitters. In: Radio Frequency Integrated Circuits Symposium (RFIC), 2011 IEEE, pp 1–4, 5–7 June 2011 9. Piessens T, Steyaert MSJ (2005) Behavioral analysis of self-oscillating class-D line drivers.
This loss can be avoided through making a dead-time during the switching phase and break before make techniques. The second kind is capacitive loss, as each transistor charges and discharges a set of capacitances within the devices. The last kind is the loss related to simultaneous conduction of both FET devices. The loss due to charge storage and discharge in the input node is considered as driver loss and does not contribute to the major power loss of the PA. The conductive loss is Pc ¼ Rds; on IL2 , as long as it can be assumed that the switch can be modeled like a linear resistor.
Describing function is the gain assignment to a general nonlinear block, relating the correlated output to the according input signal. The describing function gain will depend on the type of input signal. The approach was based on the methods formulated in [1, 7] and an extension to that for complex Gaussian process and frequency translating nonlinear phenomena. The formulas and concepts introduced will be used in the following chapters for analysis and simulation. References 1. Gelb A, Velde WEV (1968) Multiple-input describing functions and nonlinear system design.